This paper describes the lithographic processing of several positive novolak‐based resists exposed on the IBM x‐ray lithography system at the Brookhaven National Laboratory 750 MeV storage ring. One of the advantages of the storage ring exposure system has been the ability to use resist development processes which are the same as the corresponding optical or e‐beam processes. The exposure system and the x‐ray mask used for resist evaluation are described elsewhere in this symposium. Determining the best process conditions requires consideration of mask contrast as well as the desired linewidth and profile control, particularly in the presence of topography. Data will be presented and compared with results obtained using other lithographic systems (i.e., e‐beam and conventional source x‐ray). In particular, the relationship of mask absorber thickness to process window will be presented using a simple model of the development process. Using the process window defined by this model, we have exposed test patterns and typical device patterns in 1 to 2 μm thick conventional positive novolak resists. Linewidth control data as a function of dose and development time were determined for one resist at doses in the 100–200 mJ/cm2range and compared with corresponding results using electron beam exposure. The x‐ray exposures compared favorably with the electron beam exposures in the dosage ranges considered.