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Changes induced by ion implantation in forsterite Sio4Mg2

 

作者: S. Massouh,   Ch. Bovier,   J. Serughetti,  

 

期刊: Radiation Effects  （Taylor Available online 1982）
卷期: Volume 65, issue 1-4  

页码: 73-73

 

ISSN:0033-7579

 

年代: 1982

 

DOI:10.1080/00337578208216819

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The various methods of optical absorption spectroscopy, Rutherford back-scattering, transmission electron microscopy and X-ray diffraction, have been associated to study the high-dose ion implantation (150 keV, 1017ions cm−2) phenomena in SiO4Mg2single crystals. After thermal annealing at high temperature under vacuum or in atmosphere, different new phases appear:

 

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