Atom and carrier depth distributions for 300 kev arsenic channeled in the ⟨110⟩ of silicon as a function of alignment angle and ion fluence

 

作者: R.G. Wilson,  

 

期刊: Radiation Effects  （Taylor Available online 1981）
卷期: Volume 57, issue 4  

页码: 109-113

 

ISSN:0033-7579

 

年代: 1981

 

DOI:10.1080/01422448008226510

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

 

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