Electronic states tuning of InAs self-assembled quantum dots
作者:
J. M. Garcı´a,
T. Mankad,
P. O. Holtz,
P. J. Wellman,
P. M. Petroff,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 24
页码: 3172-3174
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121583
出版商: AIP
数据来源: AIP
摘要:
We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition. ©1998 American Institute of Physics.
点击下载:
PDF
(66KB)
返 回