首页   按字顺浏览 期刊浏览 卷期浏览 Defect band behavior inp‐Cd0.96Zn0.04Te by hydrogen passivation
Defect band behavior inp‐Cd0.96Zn0.04Te by hydrogen passivation

 

作者: M. D. Kim,   T. W. Kang,   J. M. Kim,   H. K. Kim,   Y. T. Jeoung,   T. W. Kim,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 73, issue 8  

页码: 4077-4079

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.352833

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties ofp‐Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After thep‐Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After thep‐Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.

 

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