The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon
作者:
A. Lietoila,
R. B. Gold,
J. F. Gibbons,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 10
页码: 810-812
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92566
出版商: AIP
数据来源: AIP
摘要:
The rate of cw laser induced solid phase epitaxy in self‐implantation amorphized silicon has been measured by determining the dwell time required to regrow the entire amorphous layer at the center of a scanned laser beam. The measurement was performed in the annealing temperature range of 800–900 °C. The measured regrowth rates were about two orders of magnitude higher than those extrapolated from low‐temperature furnace annealing data.
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