Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate
作者:
Michael E. Hoenk,
Howard Z. Chen,
Amnon Yariv,
Hadis Morkoc¸,
Kerry J. Vahala,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 14
页码: 1347-1349
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100711
出版商: AIP
数据来源: AIP
摘要:
Cathodoluminescence scanning electron microscopy is used to study AlxGa1−xAs epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011¯] direction were etched in an undoped GaAs substrate. Growth on such grooves proceeds on particular facet planes. We find that the aluminum concentration in the epilayers is dependent on the facet orientation, changing by as much as 35% from the value in the unpatterned areas. The transition in the aluminum concentration at a boundary between two facets is observed to be very abrupt.
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