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Epitaxial growth and properties of YBa2Cu3O7−&dgr;/NdGaO3/YBa2Cu3O7−&dgr;trilayer structures

 

作者: Yu. Boikov,   G. Brorsson,   T. Claeson,   Z. G. Ivanov,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 20  

页码: 2606-2608

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105917

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have used laser deposition to make YBa2Cu3O7−&dgr;/NdGaO3/YBa2Cu3O7−&dgr;trilayer structures. NdGaO3films grow epitaxially on well lattice‐matched substrates, like SrTiO3(100), and onc‐axis oriented YBa2Cu3O7−&dgr;films. Epitaxial YBa2Cu3O7−&dgr;films were grown on top of the NdGaO3films, and there was no significant difference in critical temperature between top and bottom layers of the trilayer structures. The resistivity of a 300‐nm‐thick NdGaO3interlayer was as high as 108&OHgr; cm at 300 K.

 

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