Epitaxial growth and properties of YBa2Cu3O7−&dgr;/NdGaO3/YBa2Cu3O7−&dgr;trilayer structures
作者:
Yu. Boikov,
G. Brorsson,
T. Claeson,
Z. G. Ivanov,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 20
页码: 2606-2608
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105917
出版商: AIP
数据来源: AIP
摘要:
We have used laser deposition to make YBa2Cu3O7−&dgr;/NdGaO3/YBa2Cu3O7−&dgr;trilayer structures. NdGaO3films grow epitaxially on well lattice‐matched substrates, like SrTiO3(100), and onc‐axis oriented YBa2Cu3O7−&dgr;films. Epitaxial YBa2Cu3O7−&dgr;films were grown on top of the NdGaO3films, and there was no significant difference in critical temperature between top and bottom layers of the trilayer structures. The resistivity of a 300‐nm‐thick NdGaO3interlayer was as high as 108&OHgr; cm at 300 K.
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