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Plasma particulate contamination control. I. Transport and process effects

 

作者: Gary S. Selwyn,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1991)
卷期: Volume 9, issue 6  

页码: 3487-3492

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585829

 

出版商: American Vacuum Society

 

关键词: TRAPPING;PARTICULATES;PLASMA;TRANSPORT PROCESSES;MICROELECTRONICS;CONTAMINATION;IMAGE FORMING;LASER RADIATION;ELECTRODES

 

数据来源: AIP

 

摘要:

The transport and behavior of particulates during plasma processing is imaged in real time using rastered laser light scattering combined with video detection. Results show the distribution of particles is highly ordered and predictable. Two effects have major influence on the distribution and location of particles: feed gas drag and electrostatic traps. Particle traps form from plasma disturbances and design properties of the electrode and the tooling. These results are confirmed in normal plasma conditions used in microelectronics fabrication. A strategy is presented for plasma contamination control. Complete elimination of trapping effects is not feasible. Instead, process techniques are used to minimize or defeat the attractive nature of the traps. Several examples are discussed.

 

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