Many device scientists believe that current Ultra Large Scale Integration (ULSI) technology will face technical and economic difficulties in further miniaturization. It has been predicted that 1‐dimensional (1‐D) transistors with connecting wires in three‐dimensionally stacked structures may replace current field effect transistors in planar integration structures. We propose a new scheme to fabricate and integrate 1‐D active devices. As a first step, we show the way to form 1‐D wires with spatially variable electronic structures and the way to characterize them. © 2003 American Institute of Physics