Numerical solutions of the (field and diffusion) transport equations yield energy and concentration contours for thick M1‐I‐M2(metal‐insulator‐metal) barriers, and their appropriate current‐voltage relationships, with and without traps. Traps must ordinarily be expected in such films, and it is shown that they result in a curvature of the barrier profile, which exercises a controlling influence overI‐Vcharacteristics in the forward direction.