The change of electrical conduction in the valence/conduction band to the impurity band in CdSexTe1−xthin films
作者:
P. J. Sebastian,
V. Sivaramakrishnan,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 7
页码: 3536-3538
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345329
出版商: AIP
数据来源: AIP
摘要:
Reported here are the results of investigations carried out on the mechanism of electrical conduction in CdSexTe1−xthin films between 300 and 125 K in vacuum. All the films showed a transition from grain boundary limited conduction in the conduction/valence band to phonon assisted hopping via the impurity band (impurity band conduction) at around 280–290 K. The grain boundary limited conduction showed an activation energy equal to about 0.14 eV and conduction via impurity band showed an activation energy of about 0.02 eV, which is characteristic of phonon assisted hopping conduction.
点击下载:
PDF
(259KB)
返 回