Noise measurements on junction field effect transistors
作者:
Giovanni Vittorio Pallottino,
Achille Emanuele Zirizzotti,
期刊:
Review of Scientific Instruments
(AIP Available online 1994)
卷期:
Volume 65,
issue 1
页码: 212-220
ISSN:0034-6748
年代: 1994
DOI:10.1063/1.1145210
出版商: AIP
数据来源: AIP
摘要:
We report the experimental results of noise measurements performed on junction field effect transistors (2SK162) in the frequency range 1–100 kHz, where the internal correlation effects are not negligible. The experimental data have been analyzed to determine the input current noise spectrum and the spectral energy sensitivity of the device, expressed in terms of noise temperature. We obtainedVn&bartil;0.6 nV/&sqrt;Hz, andIn&bartil;4 fA/ &sqrt;Hz at 1 kHz,In&bartil;25 fA/ &sqrt;Hz at 100 kHz. We also report and discuss the results of measurements performed at the temperature of 200 K, which show that the reduction of the noise is not very significant for this specific device.
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