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Noise measurements on junction field effect transistors

 

作者: Giovanni Vittorio Pallottino,   Achille Emanuele Zirizzotti,  

 

期刊: Review of Scientific Instruments  (AIP Available online 1994)
卷期: Volume 65, issue 1  

页码: 212-220

 

ISSN:0034-6748

 

年代: 1994

 

DOI:10.1063/1.1145210

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the experimental results of noise measurements performed on junction field effect transistors (2SK162) in the frequency range 1–100 kHz, where the internal correlation effects are not negligible. The experimental data have been analyzed to determine the input current noise spectrum and the spectral energy sensitivity of the device, expressed in terms of noise temperature. We obtainedVn&bartil;0.6 nV/&sqrt;Hz, andIn&bartil;4 fA/ &sqrt;Hz at 1 kHz,In&bartil;25 fA/ &sqrt;Hz at 100 kHz. We also report and discuss the results of measurements performed at the temperature of 200 K, which show that the reduction of the noise is not very significant for this specific device.  

 

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