The anomalous and ordinary Hall coefficientsRsandR0defined by the relation &rgr;H≡R0B+Rs4&pgr;Mhave been obtained for single‐crystal Tb in both ordered and paramagnetic states. Results for the component of the Hall resistivity &rgr;Hcharacterized byH(andM) in the basal plane 101¯0 easy axis in Tb) show that &rgr;His linear inHaboveTNand exhibits a strong temperature dependence which is almost entirely due to that of the magnetic susceptibility.Rsis found equal to −40.4×10−12&OHgr;·cm/G and temperature independent. BelowTNthe anomalous coefficient found from the saturation Hall resistivity reverses sign, passes through a maximum near 140°K (whereRs=+22.4×10−12&OHgr;·cm/G) and falls to 0 below 30°K. Possible mechanisms for this unique sign reversal inRsare discussed. TheT‐independent nature ofRsaboveTNplus a linear dependence ofRson the derived magnetic resistivity below 120°K indicates that thermal disorder of the 4fspin system is the dominant scattering mechanism in the Hall effect. The normal coefficient is essentially temperature independent above approximately 260°K (R0=−1.0×10−12&OHgr;·cm/G) and below 90°K. At intermediate temperaturesR0rises to a positive maximum of +8.8×10−12&OHgr;·cm/G at 205°K. Hall resistivity data aboveTNwithHalong ⟨0001⟩ directions (second independent component in hcp symmetry) give significantly larger values ofRsandR0reflecting the Fermi surface anisotropy.