Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature
作者:
C.-K. Sun,
T.-L. Chiu,
S. Keller,
G. Wang,
M. S. Minsky,
S. P. DenBaars,
J. E. Bowers,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 4
页码: 425-427
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119568
出版商: AIP
数据来源: AIP
摘要:
We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN single-quantum wells. At room temperature, carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at room temperature was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum well interface. ©1997 American Institute of Physics.
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