Interstitial defects in silicon from 1–5 keVSi+ion implantation
作者:
Aditya Agarwal,
Tony E. Haynes,
David J. Eaglesham,
Hans-J. Gossmann,
Dale C. Jacobson,
John M. Poate,
Yu. E. Erokhin,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 25
页码: 3332-3334
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119161
出版商: AIP
数据来源: AIP
摘要:
Extended defects from 5-, 2-, and 1-keVSi+ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and3×1014 cm−2and annealing temperatures from 750 to 900 °C. Despite the proximity of the surface, {311}-type defects are observed even for 1 keV. Samples with a peak concentration of excess interstitials exceeding ∼1&percent; of the atomic density also contain some {311} defects which are corrugated across their width. These so-called zig-zag {311} defects are more stable than the ordinary {311} defects, having a dissolution rate at 750 °C which is ten times smaller. Due to their enhanced stability, the zig-zag {311} defects grow to lengths that are many times longer than their distance from the surface. It is proposed that zig-zag {311} defects form during the early stages of annealing by coalescence the high volume density of {311} defects confined within a very narrow implanted layer. These findings indicate that defect formation and dissolution will continue to control the interstitial supersaturation from ion implantation down to very low energies. ©1997 American Institute of Physics.
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