Room‐temperature electron diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs
作者:
M. M. Tashima,
L. W. Cook,
G. E. Stillman,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 12
页码: 960-961
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92625
出版商: AIP
数据来源: AIP
摘要:
Room‐temperature electron diffusion lengths (Ln) were determined for lattice matched,p‐type InGaAsP and InGaAs layers grown by liquid phase epitaxy on Sn‐doped (100)‐InP substrates by measuring the variation of the short‐circuit photocurrent as a focused laser beam was scanned along a beveled (&Vthgr;∼1 °)p‐njunction. The hole concentrations, determined by capacitance‐voltage (C‐V) measurements, indicated an almost linear relationship between the hole concentrations in both the quaternary and ternary layers and the amount of Zn in the melt for the growth temperatures and substrate orientation used in this work. The electron diffusion lengths were longest at the lowest hole concentrations and decreased monotonically as the concentration increased. At the lowest doping levels,Lnwas 3.5 &mgr;m atp= 3×1015cm−3for the quaternary and 2.5 &mgr;m atp= 1.4×1016cm−3for the ternary. At the highest hole concentration (p= 5×1018cm−3)Lnwas 0.13 and 0.83 &mgr;m for InGaAsP and InGaAs, respectively.
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