Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition
作者:
Sadanand V. Deshpande,
Erdogan Gulari,
Steven W. Brown,
Stephen C. Rand,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 12
页码: 6534-6541
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359062
出版商: AIP
数据来源: AIP
摘要:
Silicon nitride films were deposited at low temperatures (245–370 °C) and high deposition rates (500–1700 A˚/min) by hot filament assisted chemical vapor deposition (HFCVD). Optical properties of these amorphous silicon nitride thin films have been extensively characterized by absorption, photoluminescence (PL), photoluminescence excitation, and electroluminescence measurements. The optical band gap of the films was varied between 2.43 and 4.74 eV by adjusting the flow rate of the disilane source gas. Three broad peaks at 1.8, 2.4, and 3.0 eV were observed in the PL spectra from these films. A simple qualitative model based on nitrogen and silicon dangling bonds adequately explains the observed PL features. The photoluminescence intensity observed in these films was 8–10 times stronger than films deposited by plasma enhanced chemical vapor deposition, under similar conditions. The high deposition rates obtained by HFCVD is believed to introduce a large number of these optically active defects. ©1995 American Institute of Physics.
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