Semiconductor nanostructures formed by the Turing instability
作者:
Jiro Temmyo,
Richard No¨tzel,
Toshiaki Tamamura,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 8
页码: 1086-1088
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119735
出版商: AIP
数据来源: AIP
摘要:
We describe the surface topography domain in a strained InGaAs/AlGaAs system on the GaAs (311)B substrate during metalorganic-vapor-phase-epitaxial growth. The surface rearrangement resulting in the formation of nanostructures seems to belong to a Turing-type self-organization phenomenon that results from a spontaneous symmetry-breaking instability in nonlinear dynamical systems. The unique surface morphologies on the high Miller index faces suggest a novel fourth growth mode due to Turing-type self-organization. ©1997 American Institute of Physics.
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