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Threshold for argon bubble growth in sputtered amorphous Nb3Ge

 

作者: A. Pruymboom,   P. Berghuis,   P. H. Kes,   H. W. Zandbergen,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 23  

页码: 1645-1647

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97755

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have studied the influence of the bias potential on argon incorporation and bubble formation in sputtered thin films ofa‐Nb3Ge. Above 100 V bias bubbles are observed directly by transmission electron microscopy and indirectly by abrupt changes in the electronic properties. The influence of the sputter parameters on argon incorporation at 0 V bias is also investigated.

 

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