Continuous single‐crystal Si films on SiO2have been prepared by a simplified version of the technique for lateral epitaxy by seeded solidification (LESS). The new method employs transient heating by a simple stationary graphite heater, while the original method utilized two graphite heaters, one of which was moved during LESS processing. The Si films obtained by the one‐heater method are comparable in crystal quality to those prepared by the two‐heater method.