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Investigation of roughened silicon surfaces using fractal analysis. II. Chemical etching, rapid thermal chemical vapor deposition, and thermal oxidation

 

作者: L. Spanos,   Q. Liu,   E. A. Irene,   T. Zettler,   B. Hornung,   J. J. Wortman,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1994）
卷期: Volume 12, issue 5  

页码: 2653-2661

 

ISSN:0734-2101

 

年代: 1994

 

DOI:10.1116/1.579085

 

出版商: American Vacuum Society

 

关键词: SILICON;SURFACE STRUCTURE;ROUGHNESS;FRACTALS;ATOMIC FORCE MICROSCOPY;ELLIPSOMETRY;CVD;ETCHING;OXIDATION;Si

 

数据来源: AIP

 

摘要:

Fractal analysis was applied to images of rough silicon surfaces which were acquired with an atomic force microscope. Spectroscopic ellipsometry was also used to extract roughness information using an optical model and the Bruggeman effective‐medium approximation. Different rough silicon surfaces were examined from three microelectronics processes; rapid thermal chemical vapor deposition, chemical etching, and thermal oxidation. The fractal nature of the surfaces and the correlation between fractal, optical, and topographic parameters were explored.  

 

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