Compounds in the Pd‐Si and Pt‐Si system obtained by electron bombardment and post‐thermal annealing
作者:
G. Majni,
F. Nava,
G. Ottaviani,
E. Danna,
G. Leggieri,
A. Luches,
G. Celotti,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 6
页码: 4055-4061
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.329253
出版商: AIP
数据来源: AIP
摘要:
Thin Pt, Pd, Pt2Si, and Pd2Si films deposited on Si were reacted by using electron beam pulses of 60 nsec duration in the 0.4–2.4 J/cm2energy density range. Irradiaton of Pd/Si structure produces at the same time PdSi, Pd2Si, Pd3Si, and Pd4Si, while PdSi is the only phase observed starting from the Pd2Si/Si structure. Post‐thermal annealing of these layers up to 600 °C induces the growth of Pd2Si phase at the expense of the other phases. PdSi seems to be a metastable phase at least up to 600 °C. PtSi, Pt2Si, Pt3Si compounds are formed after irradiation of Pt/Si structure. Post‐thermal annealing at 500 °C produces PtSi. A Si‐enriched metastable phase Pt2Si3is present after irradiation of Pt2Si/Si or PtSi/Si structure. Post‐thermal annealing at 450 °C produces the growth of Pt2Si3. Further annealing at 500 °C induces the formation of PtSi and Si polycrystal.
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