首页   按字顺浏览 期刊浏览 卷期浏览 On the feasibility of growing dilute CxSi1−xepitaxial alloys
On the feasibility of growing dilute CxSi1−xepitaxial alloys

 

作者: J. B. Posthill,   R. A. Rudder,   S. V. Hattangady,   G. G. Fountain,   R. J. Markunas,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 8  

页码: 734-736

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102696

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Dilute CxSi1−xepitaxial films have been grown on Si(100) by remote plasma‐enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x‐ray diffraction and transmission electron microscopy.

 

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