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Recent developments in ohmic contacts for III–V compound semiconductors

 

作者: T. C. Shen,   G. B. Gao,   H. Morkoç,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 5  

页码: 2113-2132

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586179

 

出版商: American Vacuum Society

 

关键词: FABRICATION;OHMIC CONTACTS;CONTACT PROBLEMS;FIELD EFFECT TRANSISTORS;BIPOLAR TRANSISTORS;III−V SEMICONDUCTORS;METAL−SEMICONDUCTOR CONTACTS;RELIABILITY

 

数据来源: AIP

 

摘要:

Recent advances in the technology and understanding of ohmic contacts for a variety of III–V compound semiconductor material systems are reviewed. Special attention is focused on factors and critical issues involved in making low resistance and reliable ohmic contacts. The solid‐phase regrowth mechanisms of key metallization systems are described. In addition, special techniques to improve the ohmic contacts are discussed. Finally, the reliability issues of ohmic contacts are addressed.

 

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