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Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures

 

作者: K. Meehan,   J. M. Brown,   M. D. Camras,   N. Holonyak,   R. D. Burnham,   T. L. Paoli,   W. Streifer,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 4  

页码: 428-430

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94798

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Transmission electron microscopy and photoluminescence data are used to show that asingleGaAs quantum well (Lz≊70 A˚) confined by Alx′Ga1−x′As (x′∼0.3) layers can, via low‐temperature (600 °C) Zn diffusion, be interdiffused (‘‘absorbed’’) into the confining layers (impurity‐assisted Al‐Ga interdiffusion) and be shifted to higher gap (x=0→x′∼0.3) without damaging the crystal or ruining its capability to operate as a continuous 300‐K low threshold photopumped laser.

 

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