The fluorinated gate oxides grown by the method of liquid phase deposition (LPD) following rapid thermal oxidation (RTO) were studied in this work. Samples with and without aluminum are both investigated in the LPD process. It was found that the amount of F atoms decreases as the LPD oxide was treated subsequently by RTO treatment. For a given time of RTO, the longer the LPD time, the larger the amount of F contained in the gate oxides. But for a given time of LPD, the longer the RTO time, the smaller the amount of F contained in the gate oxides. It was found that the radiation induced oxide charge number density shift &Dgr;Notand the midgap interface trap density shift &Dgr;Ditm, and the oxide breakdown fieldEoxexhibit turnaround dependencies on the LPD growth time. In other words, they are dependent on the amount of F atoms incorporated into the gate oxide. Interestingly, it was found that for the gate oxides grown by the LPD process containing Al have better quality than the LPD without containing Al from the viewpoint of radiation hardness and electric breakdown field. ©1995 American Institute of Physics.