We describe a new kind of InP/InGaAsP buried ridge laser—the buried mesa ridge laser. A simple calculation shows that this laser structure has considerably reduced leakage currents compared with the conventional buried ridge laser. The fabrication steps are described. The light‐current characteristic curve measured on the InP/InGaAsP buried mesa ridge laser shows a linear behavior up to 40 mW, the highest value reported so far for the buried ridge type laser.