首页   按字顺浏览 期刊浏览 卷期浏览 Formation of a new deep emission in Si+, S+, Se+, and Te+ion‐implanted GaAs
Formation of a new deep emission in Si+, S+, Se+, and Te+ion‐implanted GaAs

 

作者: Yunosuke Makita,   Yoshinori Takeuchi,   Toshio Nomura,   Hideki Tanaka,   Toshihiko Kanayama,   Hisao Tanoue,   Katsuhiro Irie,   Nobukazu Ohnishi,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 5  

页码: 329-331

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97013

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoluminescence studies of Si+, S+, Se+, and Te+ion‐implanted GaAs made by molecular beam epitaxy were carried out at 2 K. A new emission denoted by [D] was commonly obtained at 1.408 eV. It was also found that the controversial near band‐edge emissions, ‘g’ and [g‐g], which were originally produced by the ion implantation of acceptor impurities, were not formed by donor ion implantation.

 

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