Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer
作者:
Jiangbao Wang,
Qiang Xu,
Jian Yuan,
Fang Lu,
Henghui Sun,
Xun Wang,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 7
页码: 2974-2977
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.358713
出版商: AIP
数据来源: AIP
摘要:
The lattice parameters of heavily boron doped silicon homoepitaxial layers before and after rapid thermal annealing at different temperatures (800–1100 °C) are characterized by x‐ray double crystal diffraction. The results illustrate that although the strain relaxation occurs after the rapid thermal annealing (RTA) treatment, the improvement of the crystalline quality of epitaxial layers are observed at RTA temperatures higher than 1000 °C. The proportional relationship between the lattice mismatch and the substitutional boron concentration with the lattice contract coefficient &bgr;=5.3 (in units 10−24cm3) is valid up to the concentration of 3×1020cm−3. ©1995 American Institute of Physics.
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