Predicting in‐plane distortion from electron‐beam lithography on x‐ray mask membranes
作者:
D. L. Laird,
R. L. Engelstad,
D. M. Puisto,
R. E. Acosta,
K. D. Cummings,
W. A. Johnson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 4308-4313
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.589042
出版商: American Vacuum Society
关键词: masks;resists;PMMA
数据来源: AIP
摘要:
To produce x‐ray masks useable for 0.25 μm lithography and beyond, all sources of mask distortion must be minimized. In order to facilitate the fabrication of high‐quality masks, the phenomenon of changes in resist stress during e‐beam exposure has been studied. Finite element modeling was employed to determine the effects of various geometric and material properties on final image quality. Additionally, writing patterns and multipass exposure were also studied. The results indicate that the stress relief phenomenon can be controlled in a well‐designed system.
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