High‐power quantum‐well modulators exploiting resonant tunneling
作者:
Robert A. Morgan,
Leo M. F. Chirovsky,
Marlin W. Focht,
Ronald E. Leibenguth,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 27
页码: 3524-3526
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106395
出版商: AIP
数据来源: AIP
摘要:
We propose and demonstrate novel surface‐normal multiple‐quantum‐well reflection modulators which are operable at high intensities while maintaining high contrast (greater than 10) by exploiting resonant tunneling between adjacent wells. At the resonant tunneling field, the lifetime of the excited (highly absorbing) state is dramatically shortened, thus minimizing carrier‐density‐dependent saturation effects. Moreover, we show that even in a Fabry–Perot cavity, device deterioration due to saturation is greatly reduced.
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