Plastic relaxation of InGaAs grown on GaAs
作者:
D. J. Dunstan,
P. Kidd,
L. K. Howard,
R. H. Dixon,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 26
页码: 3390-3392
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105684
出版商: AIP
数据来源: AIP
摘要:
We report measurements of the plastic relaxation of InGaAs layers grown above critical thickness on GaAs substrates. The relaxation is accurately hyperbolic, proportional to the reciprocal of the layer thickness, in agreement with a recent geometrical theory of critical thickness [D. J. Dunstan, S. Young, and R. H. Dixon, J. Appl. Phys.70, 3038 (1991)]. At large thicknesses, work hardening is observed which leads to a residual strain dependent on the original misfit.
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