Electrical phenomena in metal‐oxide‐semiconductor capacitors caused by Fowler–Nordheim tunneling injection of electrons have been studied at temperatures ranging from 77 to 300 K. It has been found that the shift of flatband voltages (&Dgr;VFB) depends on the oxidation temperature and that low‐temperature oxidation is desirable for the reduction of &Dgr;VFB. The dependence of &Dgr;VFBon the injection temperature shows a characteristic feature: The &Dgr;VFBreduces with decreasing injection temperature in the range above 180 K and, on the other hand, is almost independent of the injection temperature in the range below 180 K. These results are mainly attributable to the injection temperature dependence of interface state generation. The injection temperature dependence of interface state density clearly indicates that two generation mechanisms of interface states are present. In addition, we have found a power‐law dependence of the generated interface states on &Dgr;VFB, independent of oxidation and injection conditions.