Gas Incorporation into Sputtered Films
作者:
Harold F. Winters,
Eric Kay,
期刊:
Journal of Applied Physics
(AIP Available online 1967)
卷期:
Volume 38,
issue 10
页码: 3928-3934
ISSN:0021-8979
年代: 1967
DOI:10.1063/1.1709043
出版商: AIP
数据来源: AIP
摘要:
The concentration of argon in sputtered nickel films has been obtained as a function of the film‐growth temperature, the discharge pressure, and of the energy (bias voltage) with which the argon ions bombard the growing film. The concentrations vary from about 10−1argon atoms/Ni atom to 10−4argon atoms/Ni atom, depending upon the conditions during film growth. The incorporation of both argon and nitrogen into nickel films is interpreted on the basis of results previously obtained from sorption studies in a more‐idealized system on a pre‐existing nickel surface.
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