La-modified lead titanate(PLT) thin films were prepared on Pt/SiO2/Si substrate by hot-wall type low pressure-metalorganic chemical vapor deposition(LP-MOCVD). The films were deposited at 500°C under the low pressure of 1000mTorr. The films were annealed at 650°C for 10min with O2ambient before top-Pt electroding. Schottky emission was observed for Pt/PLT(12)/Pt capacitor. With increasing La mole%, surface morphologies of the PLT films were improved smoothly and leakage current density decreased.