On the nonequilibrium capacitance of the Schottky diode
作者:
Gennady Gildenblat,
Simon S. Cohen,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 1
页码: 607-608
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335619
出版商: AIP
数据来源: AIP
摘要:
A general type of the boundary condition given by Simmons and Taylor is used to derive the expression for the nonequilibrium capacitance of the Schottky diode. It is shown that the deviation of the capacitance from its quasi‐equilibrium value is larger than has been previously reported. Except for the extremely strong forward biases the quasi‐equilibrium capacitance remains a valid approximation.
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