A 970 nm strained‐layer InGaAs/GaAlAs quantum well laser for pumping an erbium‐doped optical fiber amplifier
作者:
Ming C. Wu,
N. A. Olsson,
D. Sivco,
A. Y. Cho,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 3
页码: 221-223
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102837
出版商: AIP
数据来源: AIP
摘要:
We report the performance of a 970 nm strained‐layer InGaAs/GaAlAs quantum well laser and its application for pumping Er‐doped optical fiber amplifiers. The laser was grown by molecular beam epitaxy and has three In0.2Ga0.8As/GaAs quantum wells. For a 5‐&mgr;m‐wide and 400‐&mgr;m‐long ridge‐waveguide laser, a cw threshold current of 20 mA and an external quantum efficiency of 0.28 mW/mA per facet were obtained. Maximum output power exceeds 32 mW/facet. With antireflection coating, even higher external quantum efficiency (0.40 mW/mA) was achieved, and more than 20 mW of power was coupled into a single mode fiber. Preliminary experiments of pumping the Er‐doped fiber amplifier gave 15 dB of gain at 1.555 &mgr;m for a pump power of 14 mW into the Er fiber.
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