GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 &mgr;m
作者:
H. Temkin,
T. P. Pearsall,
J. C. Bean,
R. A. Logan,
S. Luryi,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 15
页码: 963-965
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96624
出版商: AIP
数据来源: AIP
摘要:
Properties of GexSi1−xstrained‐layerp‐i‐ndetectors, in which the strained‐layer superlattice itself was used as an absorption region, have been studied for the first time. These devices were grown on (100)Si by molecular beam epitaxy. Using waveguide geometry we have obtained internal quantum efficiencies on the order of 40% at 1.3 &mgr;m in superlattices with the Ge fractionx=0.6. The superlattice detectors show the frequency response bandwidth of over 1 GHz and uniformly excellent electrical characteristics for values ofxas large as 0.8.
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