SputteredBa1−xSrxTiO3(BST) andSrTiO3(STO) films and capacitors made with these dielectrics have been characterized with respect to physical and electrical properties. Specific capacitance values included a high of96 fF/&mgr;m2for BST films deposited of 600 °C and a high of26 fF/&mgr;m2for STO films deposited at 400 °C. Leakage current densities at 3.3 V for the most part varied from mid10−8to mid10−6 A/cm2.All of the dielectrics are polycrystalline, although the lowest temperature STO films have a nearly amorphous layer which impacts their capacitance. Grain size increases with deposition temperature, which correlates to higher dielectric constants. The lattice parameter of the BST films is larger than that of bulk samples. Capacitance, leakage, breakdown, and lifetime results are reported. ©1997 American Institute of Physics.