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Anisotropic reactive ion etching of InP in methane/hydrogen based plasmas

 

作者: J. W. McNabb,   H. G. Craighead,   H. Temkin,   R. A. Logan,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 3535-3537

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585839

 

出版商: American Vacuum Society

 

关键词: INDIUM PHOSPHIDES;ETCHING;ANISOTROPY;HYDROGEN;METHANE;SURFACE STRUCTURE;PLASMA;ROUGHNESS;InP

 

数据来源: AIP

 

摘要:

Reactive ion etching of InP in CH4/H2has been studied to assess anisotropy and surface morphology. Empirical models have been developed for etch and polymer deposition rates. Highly anisotropic features characterized by high ratios of etch to polymer formation rates are obtained at low methane concentration and relatively high power density. The inclusion of oxygen in the gas composition reduces polymer deposition but increases surface roughness.

 

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