Recent studies have shown that high performance 0.1 μm complementary metal–oxide semiconductor (CMOS) can be achieved with proper channel and source/drain engineering. Specifically, retrograde channel doping and shallow source/drain junctions with counterdoping implant (halo) allow the threshold voltage to be kept low while maintaining acceptable short‐channel behavior. These studies have certainly demonstrated the feasibility of CMOS technology scaled down to 0.1 μm from a device design point‐of‐view. However, the main challenge to the lithography technology is to fabricate 0.1 μm metal‐oxide‐semiconductor field‐effect transistor (MOSFET) devices with high yield and high throughput, as required in manufacturing. X‐ray lithography is a technology that can potentially meet this challenge. This work shows the results of integrating a low cost x‐ray technology with standard IC processing to fabricate high performance 100 nm and even sub‐100 nm MOSFETs.