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Thermal stability and degradation mechanism of WSiN/InGaP Schottky diodes

 

作者: Kenji Shiojima,   Kazumi Nishimura,   Fumiaki Hyuga,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 2  

页码: 652-656

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.589152

 

出版商: American Vacuum Society

 

关键词: SCHOTTKY BARRIER DIODES;INDIUM PHOSPHIDES;GALLIUM PHOSPHIDES;TUNGSTEN SILICIDES;TUNGSTEN NITRIDES;THERMAL DEGRADATION;THERMODYNAMIC PROPERTIES;INTERFACES;ANNEALING;TEMPERATURE RANGE 0400−1000 K;PHASE TRANSFORMATIONS;ELECTRICAL PROPERTIES;(In,Ga)P;W(Si,N)

 

数据来源: AIP

 

摘要:

This article shows that the thermal stability of an InGaP Schottky contact can be improved by the refractory metal WSiN. Both the electrical characteristics and interfacial reactions were estimated by theI–V(current–voltage method), scanning electron microscopy, atomic force microscopy, and Auger electron spectroscopy. The WSiN/InGaP shows excellentI–Vcharacteristics, and the Schottky barrier height is 0.85 eV after annealing at 400 °C. Over 500 °C, an interfacial reaction occurs and theI–Vcharacteristic becomes leaky. We present an interfacial reaction model that shows In atoms condense and an eutectic alloy with W is formed.

 

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