Bright-line defect formation in silicon carbide injection diodes
作者:
A. O. Konstantinov,
H. Bleichner,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 25
页码: 3700-3702
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120486
出版商: AIP
数据来源: AIP
摘要:
Irreversible formation of a network of linear defects has been observed for images showing recombination luminescence from injection diodes in hexagonal silicon carbide. The defects are related to dislocations that are initially formed as a result of thermal stress near the tip of the contact probe and subsequently propagate through the diode area. The dislocation network appears in the images of the electroluminescence as bright-line defects, in contrast to the well-known dark-line defects due to degradation of gallium–arsenide-based light-emitting devices. Higher forward currents are found to promote the dislocation growth. ©1997 American Institute of Physics.
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