Polycrystalline TaSi2thin films were prepared by furnace reaction of ion beam sputtered tantalum layers with silicon surfaces. X‐ray diffraction measurements indicate that the films are single phase hexagonal disilicide. Impurity levels are at or below the detection limits of Auger spectroscopy. The samples exhibit a room temperature intrinsic resistivity of ∼40 μΩ cm and a residual resistivity component as low as 4 μΩ cm. The Hall coefficient is negative, giving an apparent electron concentration of 6.5×1022cm−3at room temperature. A representative carrier mobility of 58 cm2/V s at room temperature (obtained from geometrical magnetoresistance measurements) was much larger than the Hall mobility (1.9 cm2/V s), suggesting multicarrier effects. The galvanomagnetic properties can be described by the equations for two degenerate, isotropic bands and be given a physical interpretation similar to that of Mott’ss‐dscattering model. However, it is emphasized that the two‐band model is likely only a crude approximation for transition metals and their compounds. A two‐layer model shows that in certain instances the apparent transport properties of the films are due to the silicon substrate.