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Response to ‘‘Comment on ‘Steady‐state temperature profile for a thin‐film resistor under bias’ ’’ [J. Appl. Phys.74, 5290 (1993)]

 

作者: Roya Sabeti,   E. M. Charlson,   E. J. Charlson,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 74, issue 8  

页码: 5291-5291

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354251

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Although the thermal conductivities of silicon and silicon dioxide do vary with temperature, minimal change would result from a temperature rise of 50 °C, from room temperature to 350 °C. as is the case in the application in question.

 

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