The microstructure of programmedn+pn+polycrystalline silicon antifuses
作者:
M. E. Lunnon,
D. W. Greve,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 6
页码: 3278-3281
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332438
出版商: AIP
数据来源: AIP
摘要:
The microstructure and programming mechanism of an electrically programmable antifuse is described. The device consists ofn+pn+junctions in polycrystalline silicon programmed by applying voltage pulses to the twon+terminals. High voltage electron microscopy and optical microscopy reveal the micro‐structure of programmed antifuses. Devices with Al metallization can be programmed with a single long pulse. The final resistance is about 20&OHgr; and a metallic aluminum spike is formed between the two contacts. With Al and TiW (barrier) metallization, programming occurs after a series of short pulses by migration ofn+dopant. This results in an ohmic contact between the twon+regions with a final resistance of approximately 300&OHgr;.
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