A novel fabrication process of ferroelectric-semiconductor heterostructures based ondirect wafer bonding(DWB) andlayer transferis proposed. Metal-ferroelectric-silicon (MFS) structures were fabricated by both layer transfer process and direct deposition of ferroelectric films onto Si. Detailed transmission electron microscope (TEM) investigations revealed that a direct wafer bonding and layer transfer process yields good quality ferroelectric/Si interfaces. Interface trap measurements show a large difference for MFS structures fabricated by bonding or by direct deposition, respectively. The trap density values were ranging from 2×1012cm−2eV−1for SBT/Si directly deposited to 4×1011cm−2eV−1for SBT/Si bonded interfaces.