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Plasma parameter and etch measurements in a multipolar confined electron cyclotron resonance discharge

 

作者: T. D. Mantei,   T. E. Ryle,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 1  

页码: 29-33

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585786

 

出版商: American Vacuum Society

 

关键词: SILICON;ETCHING;PLASMA DENSITY;ARGON;SULFUR FLUORIDES;ION DENSITY;CURRENT DENSITY;ELECTRIC DISCHARGES;ELECTRON CYCLOTRON−RESONANCE;USES

 

数据来源: AIP

 

摘要:

A multipolar confined electron cyclotron resonance discharge has been characterized by plasma parameter and etch measurements in Ar and SF6. Positive ion densities of 1011cm−3or greater are obtained at pressures of 0.1–1.0 mTorr with 400–600 W input microwave power. The positive ion current density uniformity across a 16 cm diam is ±4% at 1.0 mTorr. Silicon etch rates of 0.25–1.25 μm/min are obtained with 0.1–1.0 mTorr of SF6, with −60 V substrate bias.

 

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