The gettering of implanted Pt and Ag to hydrogen-induced cavities in Si has been compared for doses from1×1013to1×1015 cm−2.After annealing at 850 °C for 1 h, almost 100&percent; of both implanted metals were relocated to the cavity band for doses less than1×1014 cm−2.At higher doses, large differences were observed in the gettering behaviour of Pt and Ag, where the amount of Pt was saturated at close to a monolayer coverage of cavity walls, whereas the Ag accumulation at cavities continually increased with dose. Cross-sectional transmission electron microscopy revealed strong differences in the ability of Pt and Ag to form a bulk phase at the cavities. The results indicate that stable silicide formation at the near-surface and trapping of Ag to implantation damage are the main processes which limit gettering at the higher doses. ©1998 American Institute of Physics.